Si5905BDC
Vishay Siliconix
Dual P-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
-8
R DS(on) ( Ω )
0.080 at V GS = - 4.5 V
0.117 at V GS = - 2.5 V
I D (A)
- 4 a
- 4 a
Q g (Typ.)
4 nC
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs
? Compliant to RoHS Directive 2002/95/EC
0.170 at V GS = - 1.8 V
- 3.5
APPLICATIONS
1206-8 ChipFET (Dual)
?
1
? Load Switch for Portable Devices
D 1
D 1
S 1
G 1
S 2
S 1
S 2
D 2
D 2
G 2
Marking Code
DH XXX
Lot Traceability
G 1
G 2
and Date Code
Part #
Bottom View
Code
Ordering Information: Si5905BDC-T1-E3 (Lead (Pb)-free)
Si5905BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
-8
±8
- 4 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
- 4 a
- 3.5 b, c
- 2.8 b, c
- 10
- 2.6
- 1.2 b, c
3.1
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
2
1.5 b, c
W
T A = 70 °C
0.94 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 5s R thJA
Maximum Junction-to-Foot (Drain) Steady State R thJF
70 85
33 40
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 120 °C/W.
Document Number: 74650
S10-0547-Rev. B, 08-Mar-10
www.vishay.com
1
相关PDF资料
SI5915BDC-T1-GE3 MOSFET P-CH 8V CHIPFET 1206-8
SI5915DC-T1-GE3 MOSFET 2P-CH 8V 3.4A 1206-8
SI5933CDC-T1-E3 MOSFET P-CH 20V 1206-8
SI5933DC-T1-GE3 MOSFET DUAL P-CH 20V 2.7A 1206-8
SI5935DC-T1-GE3 MOSFET DUAL P-CH 20V 1206-8
SI5943DU-T1-GE3 MOSFET DUAL P-CH 12V 6A 8PWRPAK
SI5975DC-T1-GE3 MOSFET 2P-CH 12V 3.1A CHIPFET
SI5980DU-T1-GE3 MOSFET N-CH 100V PPAK CHIPFET
相关代理商/技术参数
SI5905DC 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET
SI5905DC-T1 功能描述:MOSFET 8V 4.1A 2.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5905DC-T1-E3 功能描述:MOSFET 8V 4.1A 2.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5905DC-T1-GE3 功能描述:MOSFET DUAL P-CH G-S 8V 1206-8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SI5906DU 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET
SI5906DU-T1-GE3 功能描述:MOSFET 30V 6.0A 10.4W 31mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5908DC 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SI5908DC_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET